PART |
Description |
Maker |
TA020-040-37-35 |
2.0 ?4.0 GHz 36dBm Amplifiers
|
Transcom, Inc.
|
DG03-166 |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
|
Mini-Circuits
|
AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block 100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc. AD[Analog Devices]
|
AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks Silicon Bipolar Amplifiers
|
Analog Devices
|
BFQ75 Q62702-F803 |
PNP SILICON RF TRANSISTOR (FOR BROADBAND AMPLIFIERS UP TO 2 GHZ AT COLLECTOR CURRENTS FROM 5 MA TO 30 MA.)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TA053-059-38-36 |
5.3 - 5.9 GHz 4 W Amplifiers 5.3 - 5.9 GHz 4 W Amplifiers
|
Transcom, Inc.
|
Q62702-F775 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS AG
|
Q62702-F776 A0535 BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
ERA-5SM ERA-3SM ERA-50SM ERA-4 ERA-4SM ERA-4XSM ER |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz MONOLITHIC AMPLIFIERS 50?/a> BROADBAND DC to 8 GHz MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz Surface Mount Monolithic Amplifier 50/ Broadband/ DC to 4 GHz Monolithic Amplifier 50OHM/ Broadband/ DC to 4 GHz AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery) AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 5, Max Output Current(A): 10, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery) AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 24, Max Output Current(A): 2.5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery) AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 15, Max Output Current(A): 4, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery) AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: Enclosed, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%,Single Outputs MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MINI[Mini-Circuits]
|
BFY196 |
From old datasheet system HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
|
SIEMENS[Siemens Semiconductor Group]
|
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